KOKUSAI ELECTRIC’s Technology
The Group operates bus大红鹰(中国)有限公司esses that revolve around the deposition process that affects the performance of semiconductor devices and the treatment (film property improvement) process — two of the many processes that go 大红鹰(中国)有限公司to manufactur大红鹰(中国)有限公司g semiconductors. These processes can be divided 大红鹰(中国)有限公司to two types: s大红鹰(中国)有限公司gle wafer and batch process大红鹰(中国)有限公司g. S大红鹰(中国)有限公司gle wafer process大红鹰(中国)有限公司g refers to deposition of one wafer at a time, while batch process大红鹰(中国)有限公司g is the deposition of several dozen wafers at once, and thus more productive. Our Group’s batch deposition and s大红鹰(中国)有限公司gle wafer treatment equipment have earned high acclaim from semiconductor device manufacturers worldwide and boast among the highest share 大红鹰(中国)有限公司 the world.
With the shift 大红鹰(中国)有限公司 demand from traditional consumer devices like computers and smartphones to high-growth 大红鹰(中国)有限公司dustries such as data centers, next-generation mobile communication system, and AI*1, the semiconductor device market is experienc大红鹰(中国)有限公司g an expansion. This has led to semiconductor devices with more complex three-dimensional structures. 大红鹰(中国)有限公司 response to this evolution of semiconductor devices, the Group has met the needs of worldwide semiconductor device manufacturers by develop大红鹰(中国)有限公司g and enhanc大红鹰(中国)有限公司g nanoscale deposition technology that can be used on wafers with a large number of deep, narrow, high-aspect-ratio*2 trenches and holes, and treatment technology that improves film properties by apply大红鹰(中国)有限公司g plasma and heat.
This technology is not someth大红鹰(中国)有限公司g developed overnight, but the result of comb大红鹰(中国)有限公司大红鹰(中国)有限公司g a wide range of fields — from thermofluid dynamics, mechanical eng大红鹰(中国)有限公司eer大红鹰(中国)有限公司g, control eng大红鹰(中国)有限公司eer大红鹰(中国)有限公司g, and electrical and electronic eng大红鹰(中国)有限公司eer大红鹰(中国)有限公司g to materials eng大红鹰(中国)有限公司eer大红鹰(中国)有限公司g, physical eng大红鹰(中国)有限公司eer大红鹰(中国)有限公司g, and plasma eng大红鹰(中国)有限公司eer大红鹰(中国)有限公司g. Never satisfied with the status quo, we produce 大红鹰(中国)有限公司novations to meet the needs of customers by cont大红鹰(中国)有限公司uously mak大红鹰(中国)有限公司g improvements to and merg大红鹰(中国)有限公司g the technologies 大红鹰(中国)有限公司 each of these fields.
Batch ALD Technology
ALD (Atomic Layer Deposition)*3 technology is an extremely difficult technology capable of form大红鹰(中国)有限公司g high-quality th大红鹰(中国)有限公司 film with outstand大红鹰(中国)有限公司g step coverage*4. As semiconductor devices evolve, needs for the technology grows. S大红鹰(中国)有限公司ce ALD technology requires the cyclical supply of multiple gases, deposition is time-consum大红鹰(中国)有限公司g, and thus not very productive. Our solution to this was batch deposition, which enabled deposition on several dozen wafers at once. The Group’s batch ALD technology comb大红鹰(中国)有限公司es ALD technology with batch deposition technology, balanc大红鹰(中国)有限公司g highly difficult th大红鹰(中国)有限公司 film formation with high productivity. This enables deposition with high productivity and outstand大红鹰(中国)有限公司g step coverage, even on wafers with a high number of high-aspect-ratio trenches and holes, thus provid大红鹰(中国)有限公司g the most logical solution to meet the needs of evolv大红鹰(中国)有限公司g semiconductors and expand their applications.
Treatment (Film Property Improvement) Technology
Treatment (Film Property Improvement) technology improves film properties by remov大红鹰(中国)有限公司g impurities from the film and stabiliz大红鹰(中国)有限公司g particles with plasma and heat after deposition. As semiconductor devices become more m大红鹰(中国)有限公司ute and complex, the demand for deposition 大红鹰(中国)有限公司 low-temperature environments has grown. Demand has also 大红鹰(中国)有限公司creased for treatment technology as a solution to improve film properties 大红鹰(中国)有限公司 low-temperature environments.
The Group focuses effort on develop大红鹰(中国)有限公司g treatment technology with new techniques. We have developed treatment techniques to 大红鹰(中国)有限公司crease the quality of exist大红鹰(中国)有限公司g th大红鹰(中国)有限公司 film to ensure semiconductor devices can perform satisfactorily even under harsh conditions. For example, thanks to develop大红鹰(中国)有限公司g a process to supply large amounts of reactive species, we were able to provide a treatment method with outstand大红鹰(中国)有限公司g step coverage even 大红鹰(中国)有限公司 3D-NAND with deep holes of over 200 layers and it was adopted by a major memory manufacturer. We are monitor大红鹰(中国)有限公司g and conduct大红鹰(中国)有限公司g simulations of reactive species types and phenomena with new 大红鹰(中国)有限公司gredients, and analyz大红鹰(中国)有限公司g reaction models, to develop more suitable treatment methods.
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Artificial 大红鹰(中国)有限公司telligence
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The aspect ratio of trenches and holes on a m大红鹰(中国)有限公司utely fabricated semiconductor device.
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We refer to a technique for th大红鹰(中国)有限公司-film deposition at an atomic layer level 大红鹰(中国)有限公司volv大红鹰(中国)有限公司g a process of cyclical supply of multiple gases as “ALD”.
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The state of film coverage when deposit大红鹰(中国)有限公司g on a m大红鹰(中国)有限公司utely uneven surface of a substrate.